| Tm2O3相对于Si的能带偏移研究 |
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| 引用本文： | 汪建军,方泽波,冀婷,朱燕艳,任维义,张志娇.Tm2O3相对于Si的能带偏移研究[J].物理学报,2012,61(1):17702-017702. |
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| 作者姓名： | 汪建军 方泽波 冀婷 朱燕艳 任维义 张志娇 |
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| 作者单位： | 1. 西华师范大学物理与电子信息学院, 南充 637002;
2. 绍兴文理学院物理系, 绍兴 312000;
3. 复旦大学应用表面物理国家重点实验室, 上海 200433 |
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| 基金项目： | 国家自然科学基金 (批准号: 60806031, 11004130)、 浙江省自然科学基金 (批准号: Y6100596) 和上海市重点基础研究项目 (批准号: 10JC1405900) 资助的课题. |
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| 摘 要： | 利用分子束外延系统在Si (001) 衬底上制备了单晶Tm2O3薄膜, 利用X射线光电子能谱研究了Tm2O3相对于Si的能带偏移. 得出Tm2O3相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm2O3的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm2O3是一种很有前途的高k栅介质候选材料.
关键词：
2O3')" href="#">Tm2O3
X射线光电子能谱
能带偏移
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| 关 键 词： | Tm2O3 X射线光电子能谱 能带偏移 |
| 收稿时间： | 2011-03-29 |
Band shifts of Tm2O3 films epitaxially grown on Si substrates |
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| Wang Jian-Jun,Fang Ze-Bo,Ji Ting,Zhu Yan-Yan,Ren Wei-Yi and Zhang Zhi-Jiao.Band shifts of Tm2O3 films epitaxially grown on Si substrates[J].Acta Physica Sinica,2012,61(1):17702-017702. |
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| Authors: | Wang Jian-Jun Fang Ze-Bo Ji Ting Zhu Yan-Yan Ren Wei-Yi and Zhang Zhi-Jiao |
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| Institution: | College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;Department of Physics, Shaoxing University, Shaoxing 312000, China;Department of Physics, Shaoxing University, Shaoxing 312000, China;Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China |
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| Abstract: | The single crystalline Tm2O3 films are deposited on Si(001) substrates by molecular beam epitaxy, by using x-ray photoelectron spectroscopy, the valence and the conduction-band shifts of Tm2O3 to Si are obtained to be 3.1 ± 0.2 eV and 1.9 ± 0.3 eV, respectively. The energy gap of Er2O3 is determined to be 6.1 ± 0.2 eV. The results of the study show that the Tm2O3 could be a promising candidate for high-k gate dielectrics. |
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| Keywords: | Tm2O3 s-ray photoelectron spectroscopy band offsets |
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