Polarization effects in thin layers of SiO2 and Al2O3

For film metal-dielectric-metal and hybrid-metal-dielectric-semiconductor systems based on pyrolytic fully grown films of SiO₂ and Al₂O₃ the dependence of the remanent polarization coefficient on the magnitude of the field in the films and the short circuit time was investigated. The nature of relaxation processes related to remanent polarization effects was analyzed.The authors take the opportunity to express their gratitude to A. S. Bashakidze for help in carrying out the measurements.