Investigation of 1.3 μm emission in Nd-doped bismuth-based oxide glasses |
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Authors: | Qiuhua Nie Xujie Li Shixun Dai Tiefeng Xu Yanfei Chen Xianghua Zhang |
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Institution: | aFaculty of Information Science and Engineering, The State Key Laboratory Base of Novel Functional Materials and Preparation Science, Ningbo University, Zhejiang 315211, PR China bUniversité de Rennes I, Rennes 35042, France |
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Abstract: | Nd2O3-doped 43Bi2O3–xB2O3–(57?x)SiO2–1.0Nd2O3 (x=57, 47, 39, 28.5, 19.5, 10, 0 mol%) bismuth glasses were prepared by the conventional melt-quenching method, and the Nd3+: 4F3/2→4I13/2 fluorescence properties had been studied in an oxide system Bi2O3–B2O3–SiO2. The Judd–Ofelt analysis for Nd3+ ions in bismuth boron silicate glasses was also performed on the basis of absorption spectrum, and the transition probabilities, excited-state lifetimes, the fluorescence branching ratios, quantum efficiency and the stimulated emission cross-sections of 4F3/2→4I13/2 transition were calculated and discussed. The stimulated emission cross-sections of 1.3 μm were quite large due to a large refractive index of the host. Although the effective bandwidths decreased with increasing SiO2 content, quantum efficiencies and stimulated emission cross-sections enhanced largely with increasing SiO2 content. |
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Keywords: | Bismuth boron silicate glasses Fluorescence properties Quantum efficiency |
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