Theory of surface polaritons in n-type silicon in the presence of a DC current |
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Authors: | E.G. Martin A.A. Maradudin R.F. Wallis |
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Affiliation: | 1. Physics Department, University of California at Irvine, Irvine, California 92717, USA;2. McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation, St. Louis, Missouri 63166, USA |
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Abstract: | A theoretical investigation has been carried out on the effect of a drift current on surface polaritons in n-type silicon. The current direction is taken to be parallel to the direction of propagation of the surface polaritons. From the dispersion curves, there is evidence that an interaction takes place between the current and the polaritons which gives rise to polariton instability or amplification for certain frequency ranges. These instabilities are believed to be due to the presence of the surface. |
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