离子注入硅的椭圆偏振光谱和光性

为了进一步发展测定离子注入损伤层的椭圆偏光法,我们测量了离子注入硅在4000—7000?波长范围内的椭圆偏振光谱,并由此得到它的色散关系。注入条件为150keV,10¹⁵cm^-2和10¹⁶cm^-2的砷离子注入。由于在硅样品表面处形成无定形层,我们用单层模型,从(ψ,Δ)-λ数据计算出(n,k)-λ关系,并可定出损伤层厚度。在～4800?处,出现折射率n的谱峰,峰值约4.9。本文还比较了离子注入损伤层、溅射无定形硅膜层、蒸发无定形硅膜层和单晶硅的实验结果。 关键词：

ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICON

In order to develop the ellipsometry used for determination of ion implanted damage layer, we have measured the ellipsometric spectrum of ion implanted silicon in a wavelength range of 4000-7000?. The samples were implanted by 150 keV, l0¹⁵/cm² or 10¹⁶/cm² As ions. In this case the amorphous layers were formed at the surface of Si samples, so that a monolayer model could be used to calculate the relations of (n, k)-λ from the data of (ψ, Δ)-λ. The peak of n-λ curve of As ion implanted silicon is situated at ～4800?, and the peak value is about 4.9. The experimental results of ion implanted silicon have been compared with those of sputtering amorphous silicon, evaporated amorphous silicon and single crystalline silicon.
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