Electrical and optical properties of electron-irradiated ZnGeP2 |
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Authors: | V N Brudnyi V A Novikov E A Popova |
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Institution: | (1) V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk |
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Abstract: | Conclusions and summary The following conclusions are drawn from the reported study:The electrophysical properties of ZnGeP2 crystals and their optical transparency in the range hG are attributable to the presence of a density-dominant (1017–1019 cm–3) deep Ev+(0.5–0.6) eV] growth defect associated predominantly with Zn vacancy clusters.Irradiation by high-energy electrons induces a shift of the Fermi level in the direction of EG/2 and increases the resistivity of ZnGeP2 to values of approximately 1012 ·cm at 300 K. Irradiation with high-energy electrons is an effective technique for the optical bleaching of p-ZnGeP2. The reversible modification of the optical absorption spectra of p-ZnGeP2 in connection with irradiation and subsequent annealing indicates that the absorption step in the vicinity of h 0.6 eV is not attributable to light absorption by germanium inclusions, but to optical transition from the valence band to the growth-defect level Ev+(0.5–0.6) eV.Enhancement of the optical transmissivity of p-ZnGeP2 in the range hG can be achieved in two wayss 1) as the result of a decrease in the density of centers with the level Ev+0.6 eV by variation of the growth conditions or subsequent annealing; 2) by shifting the Fermi level above the energy position Ev+0.6 eV through the irradiation-induced injection of compensating donor centers.The injection of radiation defects is an effective technique for controlling the electrical and optical parameters of the compound ZnGeP2.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 122–130, August, 1986. |
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