|
|||||
|
|
Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode |
|
| Authors: | S. Iwan S. Bambang J.L. Zhao S.T. Tan H.M. Fan L. Sun S. Zhang H.H. Ryu X.W. Sun |
| Affiliation: | 1. Jurusan Fisika, FMIPA, FMIPA Universitas Negeri Jakarta, Jl. Pemuda No. 10 Rawamangun, Jakarta 13220, Indonesia;2. PPS Ilmu Material, FMIPA, Universitas Indonesia, Jl. Salemba Raya No. 4, Jakarta 10430, Indonesia;3. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;4. Department of Physics, National University of Singapore, Blk S12, 2 Science Drive 3, Singapore 117542, Singapore;5. School of Mechanical and Aerospace Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;6. School of Nano Engineering, Inje University, 607 Obang-dong, Gimhae, Gyeongnam, South Korea 621-749 |
| Abstract: | Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. |
| Keywords: | ZnO:Er USP n-ZnO:Er/p-Si heterojunctions Room temperature Photoluminescence Electron impact excitation |
| 本文献已被 ScienceDirect 等数据库收录！ | |