Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission,and ellipsometric measurements |
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| Authors: | M. Isik N.M. Gasanly |
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| Affiliation: | 1. Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey;2. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey |
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| Abstract: | The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400–1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies. |
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| Keywords: | Semiconductors Energy band gap Ellipsometry Refractive index |
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