Direct evidence for homonuclear bonds in amorphous SiC

The Raman Spectra of carbon-deficient sputtered amorphous SiC films contain an intense band centered at 1442 cm^?1. This band is attributed to the presence of C-C bonds. Similarly a peak at ～508 cm^?1 is attributed to Si-Si bonds. The depolarization spectrum was found to be constant at $\text{?(Δ}\text{v}\text{?}\text{) = 0.32 ± 0.03}$ for $\text{0 < Δ}\text{v}\text{?}\text{< 1800}\text{cm}{}^{\mathrm{?1}}$. Our results indicate a degree of compositional disorder which prevents an identification of the observed like-atom bonds with those predicted by a modified Polk model.