Oxygen vacancy model for the E1′ center in SiO2 |
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Authors: | Frank J Feigl WBeall Fowler Kwok L Yip |
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Institution: | Physics Department, Lehigh University, Bethlehem, Penn. 18015, U.S.A. |
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Abstract: | An (oxygen)- vacancy model of the E1≈ center in alpha quartz, featuring an asymmetric relaxation of the two silicons adjacent to the oxygen vacancy, is presented and analyzed. This model is shown to be consistent with both theoretical calculations and experimental hyperfine data, in contrast with any model previously proposed for the E1≈ center. |
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