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Surface states in the conduction band region of Si |
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| Authors: | I. Eisele G. Dorda |
| Affiliation: | Siemens AG, Forschungslaboratorien, München, West Germany |
| Abstract: | The energy distribution of surface states within the conduction band has been determined analizing the mobility ratio μH/μeff. A shallow trap model was used to describe the surface states. |
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