Effect of electron irradiation on the parameters of gallium arsenide pulsed diodes

It is shown that the current-voltage characteristics of diodes produced by various methods vary in approximately the same manner. The behavior of the capacitance C(U) during irradiation can be explained on the basis of the theories developed for planar p-n junctions and Schottky barriers. The recovery time of diodes always increases during irradiation with large doses ( 10¹⁶ electrons/cm²). At smaller doses for diodes of the Schottkybarrier type (weakly formed), _recov always increases with irradiation, perhaps due to a decrease in the concentration n; for strongly formed diodes (having parameters approximating those of diffused diodes), the _recov behavior is governed by the nature of the impurity distribution and by the ratio of the lifetime of the minority carriers to the diode time constant ¯R¯C. With > RC, a decrease in _recov may be observed as a result of a decrease in .Translated from Izvestia VUZ. Fizika, No. 4, pp. 109–113, April, 1970.