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Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content(0.7) grown on GaAs (411)A substrates by molecular beam epitaxy |
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| Authors: | S. Shimomura S. Kaneko T. Motokawa K. Shinohara A. Adachi Y. Okamoto N. Sano K. Murase S. Hiyamizu |
| Affiliation: | a Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560 Japan b Research and Development Division, Nissin Electric Co. Ltd., Umezu-Takase-cho, Ukyo-ku Kyoto 615 Japan c Research and Headquarters Kubota Corporation Amagasaki, Hyogo 661 Japan d Faculty of Science, Kwansei Gakuin University Nishinomiya, Hyogo 662 Japan e Faculty of Science, Osaka University Toyonaka, Osaka 560 Japan f Research Center for Extreme Materials, Osaka University Toyonaka, Osaka 560 Japan |
| Abstract: | Effectively atomically flat interfaces over a macroscopic area (200 μm diameter) have been achieved in GaAs/Al0.7Ga0.3As quantum wells (QWs) with well widths of 3.6-12 nm grown on (411)A GaAs substrates by molecular beam epitaxy (MBE) for the first time. A single and very narrow photoluminescence peak (FWHM, full width at half maximum, is 6.1 meV) was observed at 717.4 nm for the QW with a well width of 3.6 nm at 4.2 K. The linewidth is comparable to that of growth-interrupted QWs grown on (100)-oriented GaAs substrates by MBE. A 1.5 μm thick Al0.7Ga0.3As layer with good surface morphology also could be grown on (411)A GaAs substrates in the entire growth temperature region of 580-700°C, while rough surfaces were observed in Al0.7Ga0.3As layers simultaneously grown on (100) GaAs substrates at 640-700°C. These results indicate that the surface of GaAs and Al0.7Ga0.3As grown on the (411)A GaAs substrates are extremely flat and stable on the (411)A plane. |
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