Quantum fluctuations in atomistic semiconductor devices |
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Authors: | J. R. Barker |
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Affiliation: | Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK |
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Abstract: | Atomistic Green function simulations of model 25 nm×25 nm Si MOSFETs predict strong fluctuation effects derived from mode fluctuations in the quantum transport through the inhomogeneous 2DEG channel caused by the spatial distribution of non-self-averaged discrete dopants. |
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Keywords: | Atomistic silicon devices Quantum transport Green functions |
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