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Quantum fluctuations in atomistic semiconductor devices
Authors:J. R. Barker  
Affiliation:Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK
Abstract:Atomistic Green function simulations of model 25 nm×25 nm Si MOSFETs predict strong fluctuation effects derived from mode fluctuations in the quantum transport through the inhomogeneous 2DEG channel caused by the spatial distribution of non-self-averaged discrete dopants.
Keywords:Atomistic silicon devices   Quantum transport   Green functions
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