Antiresonance of Raman Scattering in CdSxSe1-x Mixed Crystals

Abstract

Resonant enhancement of the Raman scattering cross section in II - IV semiconductors has recently received much attention both theoretically and experimentally. All existing theories anticipate a monotonic increase in the scattering intensities when the scattering radiation energy approaches the direct-energy gap. Contrary to them in an early Raman study of CdS¹ a cancellation of scattering efficiencies for the two TO modes prior to the onset of the resonance was pointed out. In a latter work on pure CdS Damen et al.² found even a more pronounced “antiresonance” behavior of the nonpolar E₂ phonon at 41 cm^?1. Thus, this striking feature seems to be rather common for the Raman active modes in CdS for which no electrooptic contribution to the scattering amplitude exists. The experimental data were qualitatively explained by assuming a destructive addition between nonresonant and the weaker resonant terms in LoudoN′s expression for the first-order Raman tensor³. Consequently the cancellation energy difference /E_G - hw_L/ depends on the ratio of the resonant term to the nonresonant terms.