Temperature-Dependent Transport Properties in Oxide p-n Junction above Room Temperature |
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| Authors: | LIU Guo-Zhen JIN Kui-Juan HE Meng QIU Jie XING Jie LU Hui-Bin YANGGuo-Zhen |
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| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Abstract: | Oxide p-n junctions ofp-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300--400K. The SITO/SNTO junction exhibited good rectifying behaviour over the wholetemperature range. Our results indicate a possibility of application of oxide p-n junction in higher temperatures in future electronic devices. |
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| Keywords: | 73.40.Lq 77.84.Dy 73.40.-c |
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