Electron probe microanalysis of HgCdTe heteroepitaxial structures with CdTe buffer layers |
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| Authors: | S. A. Dvoretskii Yu. N. Dolganin V. V. Karpov N. N. Mikhailov N. N. Mikheev A. A. Mukhanova A. N. Polyakov M. A. Stepovich |
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| Affiliation: | (1) SELEX Sensors and Airborne Systems Infrared Ltd., SO15 OEG Southampton, Hampshire, UK |
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| Abstract: | Some results of electron probe microanalysis of HgCdTe heteroepitaxial structures with wide-gap semiconductor CdTe buffer layers are described. It is shown that these structures may be used for manufacturing high-performance photodetectors for registration of infrared radiation in the ranges of 3–5 and 8–12 μm. |
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