High frequency and static dielectric constants of zinc blende structured solids

A correlation is presented for the high frequency ε_∞ and static ε_o dielectric constants of A^IIB^{V I} and A^IIIB^V semiconductors with the zinc blende structure. The high frequency ε_∞ and static ε_o dielectric constants can be represented by an empirical linear relation that is a simple function of melting temperature T_m, atomic volume Ω and product of ionic charges (Z₁Z₂). Values of high frequency ε_∞ and static ε_o dielectric constants of A^IIB^{V I} and A^IIIB^V zinc blende semiconductors exhibit a linear relationship when plotted against the k_BT_m/Ω (k_B=Boltzmann’s constant), but fall on two straight lines according to the product of ionic charges of the compounds. The calculated results are compared with available experimental data and previous calculations based on phenomenological models.