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Spectral variations in the optical transition matrix element and their impact on the optical properties associated with hydrogenated amorphous silicon
Authors:Farida Orapunt
Affiliation:
  • a Faculty of Engineering and Applied Science, University of Regina, 3737 Wascana Parkway, Regina, Saskatchewan, Canada S4S 0A2
  • b School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia, Canada V1V 1V7
  • Abstract:Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, in conjunction with an elementary model for the optical transition matrix elements, we aim to explore how variations in the matrix elements impact upon the spectral dependence of the optical properties associated with this material. We also wish to ascertain as to whether or not the hydrogenated amorphous silicon mobility gap result suggested by Jackson et al. [W.B. Jackson, S.M. Kelso, C.C. Tsai, J.W. Allen, S.-J. Oh, Phys. Rev. B 31 (1985) 5187] is consistent with the results of the experiment. We find that the mobility gap value suggested by Jackson et al. is too large. An upper bound on the mobility gap associated with hydrogenated amorphous silicon of 1.68 eV is suggested instead. Electrical measurements performed on undoped hydrogenated amorphous silicon yield a mobility gap value that is consistent with this bound.
    Keywords:A. Semiconductors   A. Hydrogenated amorphous silicon   D. Optical response   D. Optical transition matrix element
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