Engineering and metrology of epitaxial graphene |
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| Authors: | Alexander Tzalenchuk,Samuel Lara-Avila,Mikael Syvä jä rvi,Olga Kazakova,Kasper Moth-Poulsen,Sergey Kopylov,Sergey Kubatkin |
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| Affiliation: | a National Physical Laboratory, Teddington TW11 0LW, UKb Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96 Göteborg, Swedenc Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Swedend College of Chemistry, University of California, Berkeley, 637 Latimer Hall, Berkeley, CA 94720, USAe Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100, Denmarkf Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
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| Abstract: | ![]()
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. |
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| Keywords: | A. Graphene D. Quantum Hall effect D. Photochemical gate E. Metrology |
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