Hydrogen passivation effect on the yellow-green emission band and bound exciton in n - ZnO |
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| Authors: | Moon-Deock Kim Jae-Eung Oh Woo Chul Yang |
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| Affiliation: | a Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, South Koreab School of Electrical and Computer Engineering, Hanyang University, Ansan 425-791, South Koreac Department of Information and Communications, Joongbu University, Kumsan 132-940, South Koread Department of Physics, Dongguk University, Pil-Dong, Jung-Gu, Seoul 100-715, South Korea |
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| Abstract: | Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample. |
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| Keywords: | A. Semiconductors B. Crystal growth C. Impurities in semiconductors D. Optical properties |
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