Thickness dependence of positive exchange bias in ferromagnetic/antiferromagnetic bilayers |
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Authors: | Xiao-Yong Xu Yu-Jie Gao Jing-Guo Hu |
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Affiliation: | a School of Physics Science and Technology, Yangzhou University, Yangzhou 225002, Chinab School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China |
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Abstract: | For the ferromagnetic (FM)/antiferromagnetic (AFM) bilayers, both negative and positive exchange bias HE have been observed for low and high cooling field HCF, respectively. The thickness dependence of HE and coercivity HC have been investigated for the cases of negative and positive HE. It is found that the negative HE and the positive one have similar FM thickness dependence that is attributed to the interfacial nature of exchange bias. However, the AFM thickness dependence of positive HE is completely contrary to that of the negative one, which clearly demonstrates that the AFM spins play different roles for the cases of positive and negative HE. In particular, the AFM thickness of positive HE was first highlighted by an AFM spin canting model. These results should be attributed to the interfacial spin configuration after field cooling procedure. |
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Keywords: | A. FM/AFM bilayers C. Spin configuration D. Exchange bias |
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