Electronic interaction between the nitrogen,oxygen, and silicon atoms in the molecules of α-aziridin-1-ylalkoxy(triethyl)silanes

By the PMR method we have established the existence of a high frequency of the inversion of the nitrogen atom in the molecules of -aziridin-1-ylalkoxysilanes. This is due to the fact that the high (because of p-d bonding with the silicon atom) electronegativity of the oxygen atom in the Si-O-C-N system makes possible an interaction between the unshared electron pair of the nitrogen atom and the antibonding orbital of the C-O bond. The latter, in its turn, increases the degree of p-d bonding between the oxygen and silicon atoms (in these compounds the order of the Si-O bond is greater than in the alkoxysilanes).