Self-detection of lasing characteristics for semiconductor ring laser diodes |
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| Authors: | M. Ikeda Y. Maeda K. Murakami |
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| Affiliation: | (1) Department of Electronics and Electrical Engineering, Fukuyama University, Gakuen-cho, 729-02 Fukuyama, Hiroshima, Japan |
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| Abstract: | ![]()
A novel method of measurement of lasing characteristics for a ring laser diode is proposed without branching of the optical lasing power. The lasing power and the linewidth as a function of the injection current have been measured by detecting the RF power by the terminal voltage change of a ring LD. The linewidth is estimated to be 55 kHz atl=1.75lth. |
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