Microstructure control of low-resistivity tin-doped indium oxide films grown by photoreaction of nanoparticles using a KrF excimer laser at room temperature

A tin-doped indium oxide (ITO) film on a SiO₂ substrate was prepared by photo-irradiation of spin-coated nanoparticles using a Xe excimer lamp and a KrF excimer laser. The effects of the excimer lamp and the excimer laser on the resistivity, mobility, and carrier concentration of the film were investigated. To better understand how to control the microstructure of the film, we investigated the effect of thickness on the resistivity of a film prepared by the two-step process, and found that the resistivity was higher in a thicker film. Using two-step irradiation plus one-step KrF irradiation in N₂ at room temperature, we produced an ITO film with lowest resistivity of any in this study. The electrical resistivity of this film was 5.94×10⁻⁴ Ω cm. On the other hand, when using a simple thermal process, the resistivity of a film sintered at 500°C in N₂ was 4.10×10⁻³ Ω cm. The differences in resistivity are discussed on the basis of the microstructure of the films using atomic force microscopy and Hall measurements.