首页 | 本学科首页   官方微博 | 高级检索  
     


Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots
Authors:Y. Li  Voskoboynikov  C.P. Lee  S.M. Sze  O. Tretyak
Affiliation:(1) National Nano Device Laboratories, Hsinchu 300, Taiwan, TW;(2) Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, TW;(3) Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, TW;(4) Kiev Taras Shevchenko University, 01033, Kiev, Ukraine, UA
Abstract:
In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height. Received 15 May 2001 / Received in final form 14 May 2002 Published online 13 August 2002
Keywords:PACS. 71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect –   73.21.La Quantum dots –   78.20.Bh Theory, models, and numerical simulation –   85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号