半导体量子器件物理讲座第四讲 共振隧穿器件及其电路应用

当一个电子的能量低于势垒高度时，它仍可以隧穿通过势垒，在一定条件下，双势垒结构中电子的隧穿几率甚至可以接近1，利用这种共振隧穿现象可以做成共振隧穿二极管，它的电流－电压特性曲线中会出现负微分电阻，利用这种负阻效应可以做成高频振荡器和倍频器等电子器件，双势垒结构与通常的双极晶体管结合可以做成共振隧穿双极晶体管，它们可以用来做成多态记忆器和模数转换器等器件。

RESONANT TUNNELING DEVICES AND THEIR CIRCUIT APPLICATIONS

Electrons with energy lower than the barrier height can still go through the barrier by tunneling. In the case of double barrier structure the tunneling probability may still approach 1 under certain conditions. This resonant tunneling effect is the basis of the resonant tunneling diode. A negative differential resistance will appear in the I V characteristic of the diode which can be used to design high frequency oscillator and frequency multipliers. The resonant tunneling bipolar transistor is made by combining a normal bipolar transistor with the double barrier structure. This can be used to design multiple state memories and analog to digital converters.