On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field

Summary An attempt is made to study the thermoelectric power of the carriers in quantum well of A ₃ ^II B ₂ ^V semiconductors, taking Cd₃As₂ quantum well as an example. It is found, on the basis of newly derived 2DE−k _s dispersion relation by including various types of anisotropies in the energy spectrum that the thermoelectric power decreases with increasing electron concentration and decreasing film thickness respectively. In addition, the corresponding well-known results for bulk specimens of isotropic parabolic energy bands are also obtained from the expressions derived.