The electrical properties of doped silicon,grown by Molecular-Beam-Epitaxy (MBE) |
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| Authors: | R. A. A. Kubiak S. M. Newstead W. Y. Leong R. Houghton E. H. C. Parker T. E. Whall |
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| Affiliation: | (1) Solid State MBE Research Group, Sir John Cass Faculty of Physical Sciences and Technology, City of London Polytechnic, 31 Jewry Street, EC3N 2EY London, UK;(2) Department of Applied Physics and Physical Electronics, Portsmouth Polytechnic, Park Building, King Henry I Street, PO1 2DZ Portsmouth, Hampshire, UK;(3) Present address: The Birches Industrial Estate, VG Semicon Ltd., Imberhorne Lane, RH19 1XZ East Grinstead, Sussex, England |
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| Abstract: | ![]()
Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm–3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon. |
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| Keywords: | 72.20 73.60 |
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