ZnSe单晶质量对其高密度激发发光的影响

用经多次提纯ZnSe原料生长的ZnSe单晶在77K和高密度光激发下观测到了激子-激子(Ex-Ex)散射的P带,随激发密度增加,P带强度增加较快。而在通常的原生ZnSe单晶中只能观测到一个与激子-载流子(Ex-e)散射的Es''带,观测不到P带。经熔融锌中热处理的ZnSe单晶,在上述激发条件下,也观测到了P带。而且此带强度随热处理时间增加而增强。实验表明,P带的产生不仅与激发密度和温度有关,而且还与单晶质量有关。

EFFECT OF ZnSe SINGLE CRYSTAL QUALITY ON THE HIGH DENSITY EXCITATION LUMINESCENCE

Recent years there has been considerable interest in the spontaneous and Stimulated emission of ZnSe crystals[1-3]. We have studied the effect of ZnSe crystal quality on its blue electroluminescence[4]. In this paper we rcport the effect of ZnSe single crystal quality on the high density excitation luminescence.Three types of ZnSe single crystal with different starling materials were grown by sublimation in our laboratory[4]. These were 408, 413 and 420 ZnSe single crystals with (110) surface. The starting material of 408 single crystal was ZnSe powder produced by direct synthesis from 6N-Zn and 5N-Se. The starting material of 413 and 420 single crystals was also ZnSe powder produced by sublimation once and twice from the starting material of 408 single crystal, respectively. Low resistivity crystals used in this experiment were obtained by annealing the single crystals in molten zinc at 900℃ for 80-120 hours