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A statistical thermodynamic model for oxygen segregation during Czochralski growth of silicon single crystals |
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| Authors: | Lun Biao Xu |
| Affiliation: | a Institut fur Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425, Jülich Germany b Physics Department and Zhejiang Intstitute of Modern Physics, Zhejiang University, Hangzhou 310027, People's Republic of China |
| Abstract: | A thermodynamic model derived from atomic scale statistics is formulated for the crystal–melt interface where oxygen segregation occurs during silicon crystal growth by the Czochralski method. The model shows that the segregation coefficient is close to but less than unity. Approaches for controlling oxygen concentration in the resulted crystal are discussed. |
| Keywords: | Oxygen segregation Silicon crystal growth Interface |
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