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Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb0.45Sn0.55Te
Authors:G. O. Andrianov  Yu. M. Galperin  V. I. Kozub  N. Yu. Mikhailin  R. V. Parfen’ev  D. V. Shamshur  A. V. Chernyaev
Affiliation:1.Ioffe Institute,St. Petersburg,Russia;2.Department of Physics,University of Oslo,Blindern, Oslo,Norway
Abstract:
We have analyzed the temperature and magnetic-field dependences of resistivity ρ(T, H) of semiconducting compound Pb0.45Sn0.55Te doped with 5 at % In under a hydrostatic compression at P < 12 kbar. It is found that the temperature dependence ρ(T) at all pressures at T < 100 K is exponential with the activation energy decreasing upon an increase in pressure; this is accompanied with a superconducting transition on the ρ(T) and ρ(H) dependences at P > 4.8 kbar at T > 1 K (T c = 1.72 K at a level of 0.5ρ N at P = 6.8 kbar). We consider the model describing the low-temperature “dielectrization” of the semiconducting solid solution and the formation of the superconducting state upon an increase in the hydrostatic compression P > 4 kbar.
Keywords:
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