Low-temperature MOVPE growth of ZnO thin films by using a buffer layer |
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| Authors: | WZ Xu L Jiang YJ Zeng LP Zhu BH Zhao |
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| Institution: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China |
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| Abstract: | ZnO thin films have been grown on a-plane (1,1,−2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 °C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission. |
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| Keywords: | 61 10 N 81 15 Kk 68 55 73 61 G 78 66 H |
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