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Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications |
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| Authors: | Xinhong Cheng Zhaorui Song Yuehui Yu Dashen Shen |
| Affiliation: | a Department of Physics, University of Wenzhou, Xueyuan Road, Wenzhou 325000, China b The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China c Institute of Microelectronics, Tsinghua University, Beijing 100084, China d Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, AL 35899, USA |
| Abstract: | The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO2)3(SiO2) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 1012 cm−2, and the leakage current was 0.4 μA/cm2 at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO2 growth at the interface. |
| Keywords: | 77.55.+f 73.40Qv |
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