Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L |
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Authors: | L Hamadou A Kadri N Benbrahim |
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Institution: | a Laboratoire de Matériaux, Electrochimie et Corrosion, Université Mouloud Mammeri de Tizi-Ouzou, B.P. 17, Tizi-Ouzou 15000, Algeria b Laboratoire d’Electrochimie et de Physico-chimie des Matériaux et Interfaces, UMR 5631, Université de Grenoble, France |
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Abstract: | The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (Eg2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (Eg1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time. |
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Keywords: | 304L stainless steel Photocurrent Oxide films |
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