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Observation of Si(1 0 0) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy |
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| Authors: | Hitoshi Kuribayashi Masahide Gotoh Ryosuke Shimizu Hiroshi Iwasaki |
| Institution: | a Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan b Material and Science Laboratory, Fuji Electric Advanced Technology Co., Ltd., 1 Fuji-machi, Hino, Tokyo 191-8502, Japan c The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| Abstract: | We investigated the cleaning process of Si(1 0 0) surfaces by annealing in H2 gas ambient following chemical treatments by scanning tunneling microscopy. We observed the monohydride Si structure: Si(1 0 0):2 × 1-H on the surfaces annealed at 1000 °C in 2.5 × 104 Pa H2 gas ambient without conspicuous contaminants. On the sample annealed for 10 min or longer times, well-defined Si(1 0 0) structures with alternating SA and SB steps were observed, whereas the initial roughness still remained on the surfaces annealed for only 5 min. |
| Keywords: | 68 37 Ef |
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