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Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects |
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| Authors: | Hoon Kim Toshihiko Koseki Tomohiro Ohta Hiroshi Sato Yukihiro Shimogaki |
| Affiliation: | a Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan b Division of University Corporate Relations, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8654, Japan c Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi 407-0192, Japan |
| Abstract: | The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property. |
| Keywords: | 68.35.G 85.40.L |
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