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Light emission from silicon nanocrystals: Probing a single quantum dot |
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| Authors: | I Sychugov J Valenta P Pirouz |
| Institution: | a Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology, SE-16440 Kista-Stockholm, Sweden b Faculty of Mathematics and Physics, Department of Chemical Physics and Optics, Charles University, Ke Karlovu 3, Prague 2, CZ-12116, Czech Republic c Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7204, USA |
| Abstract: | Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a ∼6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a ∼60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot. |
| Keywords: | 78 67 Hc 78 55 Ap |
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