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Pressure dependent elastic properties of diluted magnetic semiconductors: Hg1−xMnxS (x=0.02 and 0.07)
Authors:Dinesh Varshney  R Sapkale  Meenu Varshney
Institution:a School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India
b Department of Physics, M.B. Khalsa College, Indore 452002, India
Abstract:A theoretical study of the elastic properties in diluted magnetic semiconductors Hg1−xMnxS (x=0.02 and 0.07) using an effective interionic interaction potential (EIoIP) in which long-range Coulomb interactions, charge transfer mechanism (three body interaction) and the Hafemeister and Flygare type short-range overlap repulsion extending up to the second neighbor ions and the van der Waals (vdW) interaction is considered. Particular attention is devoted to evaluate Poisson's ratio ν, the ratio RS/B of S (Voigt averaged shear modulus) over B (bulk modulus), elastic anisotropy parameter, elastic wave velocity, average wave velocity and thermodynamic property as Debye temperature is calculated. By analyzing Poisson's ratio ν and the ratio RS/B we conclude that Hg1−xMnxS is brittle in zinc blende (B3). To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of ductile (brittle) nature of Hg1−xMnxS compounds and still awaits experimental confirmations.
Keywords:A  Semiconductors  D  Phase transitions  D  Elastic properties  D  Mechanical properties
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