Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation

Knoop microhardness of 6H-SiC layers grown by sublimation epitaxy was investigated. The microhardness-load curves for all of the samples were measured and then used to extract the load-independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness-depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi-layer and the substrate.