1. Université Côte d''Azur, CNRS, Institut de physique de Nice, Parc Valrose, 06108 Nice, France;2. Sorbonne Université, CNRS, Institut des nanosciences de Paris, INSP, UMR 7588, 4, place Jussieu, 75005 Paris, France
Abstract:
We perform numerical simulations of hexagonal quantum dots of AlGaN semiconductors. We show that the competition between surface mass diffusion and evaporation rules the morphology of the quantum dots. The system displays three different behaviors: presence of separated islands without a wetting layer, islands dissolving into the wetting layer, or islands that do not evolve. The first behavior is of special interest because its optoelectrical properties are significantly improved in comparison with quantum dots with a wetting layer.