ZnSe薄膜的化学反应辅助热壁外延法生长及特性研究

本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。

Growth and Characterizations of ZnSe Film by Chemical Activated Hot Wall Expitaxy

A modified chemical activated hot wall expitaxy method was used to grow ZnSe films on Si(111) substrates using Zn and Se sources.The compound Zn(NH4)3Cl5,as the chemical activated agent,was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions.The ZnSe films were characterized by SEM,EDS and PL spectra for their morphologies,composition and luminescence properties.The results indicate that the chemical activated hot wall expitaxy method is a satisfactory way to grow ZnSe films.The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.