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Luminescence and energy transfer processes in Lu2SiO5:Ce scintillator |
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| Authors: | Bo Liu Chaoshu Shi Min Yin Guobin Zhang |
| Affiliation: | a Department of Physics, University of Science and Technology of China, Hefei 230026, China b NSRL, University of Science and Technology of China, Hefei 230027, China c Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20180, China |
| Abstract: | The energy transfer processes in Lu2SiO5:Ce3+ luminescence was investigated through the temperature dependent luminescence under excitation with VUV-UV. Ce1 center emission peaking at 393 and 422 nm and Ce2 center emission peaking at 462 nm were observed. Ce2 center emission is enhanced with the temperature, which can be explained by the rate of energy transfer from Ce1 center increases when the temperature rises. The Ce1 emission shows the thermal quenching effect under the direct excitation of Ce3+ at 262 nm. However, under the interband excitation of 183 nm, the Ce1 center emission exhibits undulating temperature dependence. This is because the emission is governed by thermal quenching and possible thermal enhancement of the transport of free carriers with the rising temperature. |
| Keywords: | 78.55.&minus m |
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