Electron transport properties through double-barrier structures sandwiching a wide band-gap layer |
| |
| Authors: | Zhenhong Dai Jun Ni |
| |
| Institution: | aDepartment of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084, PR China;bDepartment of Physics, Yantai University, 264005, PR China |
| |
| Abstract: | We investigate the time-dependent transport properties of the quantum well (QW) with a wide band-gap material layer, where Al atoms doped in the middle GaAs QW. We find that the raised potential well bottom can affect the position of current hysteresis, current oscillation frequency and final steady-state mean current value. Moreover in this special structure, we find a negative differential conductance and only a current hysteresis region, the plateau structure of I–V curve found in the AlGaAs/GaAs/AlGaAs QW disappears. |
| |
| Keywords: | Electron transport Quantum well Wigner function |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
