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Induction of p-type conduction in sputtered deposited Al-N codoped ZnO thin films |
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| Authors: | Amit Kumar Beer Pal Singh |
| Institution: | a Institute of Engineering & Technology, North Extn., M.I.A. Alwar-301030, Rajasthan, India b Department of Electrical & Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Hibariga-oka 1-1, Toyohashi-441-8580, Japan c Department of Physics, Ch. Charan Singh University, Meerut-250 004, India |
| Abstract: | Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 °C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 × 1016 cm− 3, resistivity of 15.95 Ω-cm and hole mobility of 3.95 cm2/Vs, respectively. Codoped ZnO thin films were found to be highly c-axis oriented with good crystal quality. A neutral acceptor-bound exciton and donor-acceptor-pair emissions that appeared at room temperature photoluminescence measurement verify p-type conduction in Al and N codoped ZnO film. The current-voltage characteristics of p-n heterojunction evidently showed a diode like rectifying behaviour. |
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