Simulation investigation on waveguide properties of terahertz wave through subwavelength semiconductor gap |
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Authors: | Xiaoyong He Hua Li |
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Affiliation: | a School of Science, Henan University of Technology, Lianhua Road, Zhengzhou, Henan Province 450001, PR China b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, PR China |
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Abstract: | The waveguide propagation properties of terahertz wave through subwavelength semiconductor trench have been simulationally investigated. The effects of gap width, temperature, doping concentration and dielectric filling materials on waveguide property have been given and discussed. The results show that as temperature and doping concentration increases, the skin depth and the propagation constant decreases. In addition, the effective index increases and the propagation length decreases as the dielectric constant of filling materials increases. |
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Keywords: | Terahertz Surface plasmon polariton Subwavelength |
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