| Institution: | 1. Laboratoire de Physique des Couches Minces et Matériaux pour l'Electronique, Université Oran 1, Ahmed Ben Bella, Oran, Algeria;2. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences, Université de Picardie Jules Verne, Amiens, France;3. Laboratoire de Physique des Couches Minces et Matériaux pour l'Electronique, Université Oran 1, Ahmed Ben Bella, Oran, Algeria
Département de Physique, Université Hassiba Ben Bouali, Chlef, Algeria |
| Abstract: | Highly crystallized hydrogenated silicon layers were obtained via the treatment of hydrogenated polymorphous silicon films in a molecular hydrogen ambient. This contrasts other postdeposition studies that obtained nanocrystalline silicon films but necessitated either a plasma activation or high-temperature annealing. The structure of the samples was analyzed by Raman spectroscopy to determine the crystallite volume fraction, which was found to increase up to 80% within 1 hour of treatment. Atomic force microscopy (AFM) showed that the roughness of the surfaces was found to increase after the H2 treatment. Optical transmission and spectroscopic ellipsometry revealed the pronounced porosity of the films characterized by a static refractive index that is below three, which is a low value for hydrogenated silicon films and a void fraction that is around 15% in the bulk of the films. The effect of the hydrogen molecules on the structure of the films was discussed in terms of the compressive stress exerted by the molecules, trapped in structural inhomogeneities, on the amorphous tissue. It is suggested that for this process to take effect, the films need to be porous and that the amorphous network needs to be in a “relaxed” state. |
