| Direct measurement of the interfacial barrier height of the manganite p–n heterojunction |
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| 引用本文： | 王妹,王登京,汪汝武,李云宝.Direct measurement of the interfacial barrier height of the manganite p–n heterojunction[J].中国物理 B,2014(4):527-530. |
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| 作者姓名： | 王妹 王登京 汪汝武 李云宝 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant No.10804089) |
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| 摘 要： | A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.
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| 关 键 词： | p-n异质结 异质结界面 势垒高度 亚锰酸盐 直接测量 SrTiO3 线性关系 温度范围 |
Direct measurement of the interfacial barrier height of the manganite p-n heterojunction |
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| Abstract: | manganite, heterojunction, interfacial barrier |
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| Keywords: | manganite heterojunction interfacial barrier |
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