| Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic （NH4）2S solution |
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| 引用本文： | 赵连锋,谭桢,王敬,许军.Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic （NH4）2S solution[J].中国物理 B,2014(7):744-747. |
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| 作者姓名： | 赵连锋 谭桢 王敬 许军 |
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| 作者单位： | Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| 基金项目： | supported by the State Key Development Program for Basic Research of China(Grant No.2011CBA00602);the Major Project of the NationalScience and Technology of China(Grant No.2011ZX02708-002) |
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| 摘 要： | Surface passivation with acidic(NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic(NH4)2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy.
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| 关 键 词： | GaSb metal oxide semiconductor sulfur passivation |
Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic(NH_4)_2S solution |
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| 《Chinese Physics》.Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic(NH_4)_2S solution[J].Chinese Physics B,2014(7):744-747. |
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| Authors: | 《Chinese Physics》 |
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| Abstract: | Surface passivation with acidic(NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic(NH4)2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy. |
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| Keywords: | GaSb metal oxide semiconductor sulfur passivation |
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