Equilibrium configurations of partial misfit dislocations in thin-film heterosystems |
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Authors: | M Yu Gutkin K N Mikaelyan I A Ovid’ko |
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Institution: | (1) Institute of Machine Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia |
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Abstract: | The energy characteristics of orthogonal rows of partial misfit dislocations with V-shaped stacking faults in thin-film heteroepitaxial systems are analyzed theoretically. It is shown that they should appear
only in very thin epitaxial films of nanoscopic thickness and for high values of the mismatch exceeding a definite value.
Under these conditions partial misfit dislocations associated with V-shaped stacking faults are typical elements of the defect structure of nanolayer heterosystems. For smaller mismatches and
larger films thicknesses total misfit dislocations should form.
Fiz. Tverd. Tela (St. Petersburg) 40, 2059–2064 (November 1998) |
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